发明名称 |
Block switch of flash memory in which high voltage (HV) can be stably delivered, even at low supply voltage and operational time reduced without incrase of chip surface |
摘要 |
<p>Block switch generate voltage higher than prior determined operating voltage for increasing prior determined voltage to selected cell block of flash memory in stable manner. Block switch generates HV clock signal of high voltage level according to select and clock signals. It raises voltage level of output terminal to preset level according to HV clock signal. Typically, selection and clock signal contain supply voltage level. Preferably block switch contains HV clock generators for delivery of higher voltage clock signal than supply voltage.</p> |
申请公布号 |
DE102004060347(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
DE20041060347 |
申请日期 |
2004.12.15 |
申请人 |
HYNIX SEMICONDUCTOR INC., ICHON |
发明人 |
PARK, JIN SU |
分类号 |
G11C16/30 |
主分类号 |
G11C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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