发明名称 |
A METHOD AND SYSTEM FOR FORMING A FEATURE IN A HIGH-K LAYER |
摘要 |
<p>A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.</p> |
申请公布号 |
WO2006038974(A2) |
申请公布日期 |
2006.04.13 |
申请号 |
WO2005US28321 |
申请日期 |
2005.08.10 |
申请人 |
TOKYO ELECTRON LIMITED;KO, AKITERU;XIA, ANNIE;CHEN, LEE |
发明人 |
KO, AKITERU;XIA, ANNIE;CHEN, LEE |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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