发明名称 |
STRAINED GETTERING LAYERS FOR SEMICONDUCTOR PROCESSES |
摘要 |
<p>A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a particle-confining region proximate the tensilely strained layer. The method can also include introducing particles into the donor wafer to a depth below the surface, and accumulating at least some particles within the tensilely strained gettering layer. Next, the method can include initiating a cleaving action so as to separate at least one of the material layers form the substrate. The tensilely strained gettering layer may accumulate particles and/or point defects and reduce the implantation dose and thermal budget required for cleaving.</p> |
申请公布号 |
WO2006039684(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
WO2005US35595 |
申请日期 |
2005.10.03 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;PITERA, ARTHUR, J.;FITZGERALD, EUGENE, A. |
发明人 |
PITERA, ARTHUR, J.;FITZGERALD, EUGENE, A. |
分类号 |
(IPC1-7):H01L21/762;C30B33/00 |
主分类号 |
(IPC1-7):H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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