| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory by which energy required to reverse a direction of magnetization of a magnetic yoke is decreased, and a write current is reduced. SOLUTION: Each of a plurality of storage regions 3 contained in the magnetic memory 1 includes a TMR element 4, a write interconnect 31 which supplies an external magnetic field to a magnetism sensitive layer by the write current, and a magnetic yoke 5 which is arranged so that it may surround an outer periphery of the write interconnect 31 in a part of an extending direction of the write interconnect 31. The TMR element includes the magnetism sensitive layer (a first magnetic layer 4b, a nonmagnetic layer 4c, and a second magnetic layer 4d) in which the direction of magnetization changes by the external magnetic field. The magnetic yoke 5 includes a first ferromagnetic layer 5a and a second ferromagnetic layer 5b provided with the write interconnect 31 placed therebetween, and a nonmagnetic layer 5c which is provided between these ferromagnetic layers 5a and 5b at both ends of these ferromagnetic layers 5a, 5b, and combines these ferromagnetic layers 5a and 5b each other in an antiferromagnetic manner. COPYRIGHT: (C)2006,JPO&NCIPI
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