| 摘要 |
PROBLEM TO BE SOLVED: To provide a new method for inexpensively forming an oxide region such as a thick oxide region in a semiconductor device without deteriorating reliability and performance of the device. SOLUTION: The method for forming the oxide region in the semiconductor device comprises a process for closely forming a plurality of trenches in a semiconductor layer of the device and a process for oxidizing the semiconductor layer so that an insulating layer is formed on a side wall and a base wall of the trench. The trench is substantially filled with the insulating layer formed as a result of the oxidation process, and the trench is constituted so that the semiconductor layer between a pair of corresponding adjacent trenches is consumed. Thus, the oxide region which substantially continues for a plurality of trenches is formed. COPYRIGHT: (C)2006,JPO&NCIPI
|
