| 摘要 |
PROBLEM TO BE SOLVED: To provide treatment conditions in which highly precise etching can be realized by a high selection ratio without generating an ArF resist damage in a low dielectric constant film (low-k film, SiOCH) corresponding to an ArF resist mask. SOLUTION: In a method of plasma processing which includes steps of: generating a plasma; using a device for etching a material to be treated by applying a high frequency voltage to a sample; using a mixed gas of a CF<SB>4</SB>and CHF<SB>3</SB>; using the ArF resist mask; and etching the SiOCH film, rare gas (for example, Ar) is not used, and the processing is performed by a low pressure of 2.O Pa or lower. COPYRIGHT: (C)2006,JPO&NCIPI
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