| 摘要 |
PROBLEM TO BE SOLVED: To restrain a temperature difference between the periphery of a contact portion to the substrate supporting part of a semiconductor substrate and a portion except it even to the semiconductor substrate of different reflectance when a rapid thermal processing device is subjected to spike anneal treatment for a rapid rising and falling tempearture in a short time. SOLUTION: The rapid thermal processing device comprises a processing chamber, a substrate supporter for supporting a semiconductor substrate, a first lamp for optically irradiating and heating the front side of the semiconductor substrate, a first radiation photosensor for sensing radiation light from the substrate, a second lamp for optically irradiating and heating the substrate supporter, a second radiation photosensor for sensing radiation light from the substrate supporter, and a temperature computer for computing the temperature of the substrate according to the output result of the first radiation photosensor and computing the temperature of the substrate supporter according to the output result of the second radiation photosensor. The control unit controls the irradiation intensity of the first lamp based on the computed temperature of the substrate, and controls the irradiation intensity of the second lamp based on the computed temperature of the substrate supporter. COPYRIGHT: (C)2006,JPO&NCIPI
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