| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable manufacturing method of a semiconductor device by preventing the formation of a hillock in metal wiring to prevent the increase of unevenness in electrical characteristics. SOLUTION: In the manufacturing method of the semiconductor device, an interlayer insulating film is formed on a semiconductor substrate, an wiring opening is formed in this interlayer insulating film, and a conductor film whose main component is copper is formed in the wiring opening. The conductor film is subjected to surface treatment for introducing hydrogen thereinto. Further, the surface treatment is made to be hydrogen plasma treatment, and surface treatment for removing the hydrogen introduced into the conductor film by the hydrogen plasma treatment is continuously executed. COPYRIGHT: (C)2006,JPO&NCIPI
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