MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the peeling of an insulating film in the vicinity of the periphery of a semiconductor substrate. SOLUTION: This method comprises at least the steps of forming a first insulating film 8 on a silicon substrate 2; forming SOG in the region on the first insulating film 8 except the vicinity region 12 of the periphery thereof; etching back for leaving the SOG in the recess on the first insulating film, removing the first insulating film 8 in the vicinity region 12 of the periphery, and exposing the surface of the silicon substrate 2 in the vicinity region 12 of the periphery; and forming a second insulating film 14 on the whole silicon substrate 2 including the vicinity region 12 of the periphery. This method further comprises an unnecessary material removing step for removing the unnecessary material adhered onto the surface of the silicon substrate 2 in the vicinity region 14 of the periphery after the etching back treatment and before the formation of the second insulating film 14. COPYRIGHT: (C)2006,JPO&NCIPI