| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing a device with a snap back breakdown voltage of about 5-10 V by the self-alignment method, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises two or more subgates 6b and 6c arranged with a predetermined interval next to a main gate 6a, and low concentration layers 7a and 7b which are the same electric potential type with source/drain layers 9a and 9b and whose concentration of impurities is lower than the concentration of the source/drain layers 9a and 9b. They are continuously arranged under the subgates 6b and 6c from the end of the source/drain layers 9a and 9b to the vicinity of the end of the main gate 6a. COPYRIGHT: (C)2006,JPO&NCIPI
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