| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which can clean the entire rear surface of a substrate and etch and remove an unnecessary substance from the surface periphery of the substrate while controlling a peripheral etching width accurately and its entire circumferential surface uniformly, and to provide its treatment method. SOLUTION: A bevel etching part 1 is placed on the upper side of a rear-surface cleaner 2 in the same space of a treatment vessel 5. While the surface of an untreated substrate W is kept downfaced, the nearly central part of the rear surface thereof is sucked and the substrate W is positioned at a bevel etching position P1, and a treatment liquid is supplied to the periphery of the surface thereof from the side of the surface thereof so as to remove an unnecessary substance by etching. Then, the substrate W is conveyed to the rear-surface cleaning position P2 of the rear-surface cleaner 2 and positioned thereat. A nitrogen gas is discharged toward the surface of the substrate W positioned at the rear-surface cleaning position P2 to keep the substrate W, and the treatment liquid is supplied to the rear surface of the substrate W while the substrate W is kept being floated. COPYRIGHT: (C)2006,JPO&NCIPI
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