发明名称 SUBSTRATE MANUFACTURING METHOD AND HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and substrate manufacturing method that reduces scratches occurring on a substrate in thermal heat treatment, minimizes slip of the substrate, suppresses the warpage of the substrate, thereby manufacturing a high-quality substrate. SOLUTION: When inserting a support device 30 with a substrate 54 placed thereon into a reaction tube 42, a preset temperature of each heater zone in a heater 46 is set to be T5<T4<T3<T2<T1. After the support device 30 is inserted into the reaction tube 42, first, the preset temperature of T5 is increased to be equal to that of T4 (T5=T4<T3<T2<T1). Next, the preset temperatures of T5 and T4 are increased to be equal to that of T3 (T5=T4=T3<T2<T1). Additionally, the preset temperatures of T5, T4 and T3 are increased to be equal to that of T2 (T5=T4=T3=T2<T1). Moreover, the preset temperatures of T5, T4, T3, and T2 are increased to be equal to that of T1 (T5=T4=T3=T2=T1). COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100303(A) 申请公布日期 2006.04.13
申请号 JP20040280884 申请日期 2004.09.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHIGURO KENICHI;SHIMADA TOMOHARU;NAKAJIMA SADAO
分类号 H01L21/324;H01L21/22;H01L21/31 主分类号 H01L21/324
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