| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of effectively utilizing a charged silicon carbide raw material as a source of a sublimation gas while maintaining the temperature of the raw material and the surface of the growing silicon carbide single crystal at a suitable level. <P>SOLUTION: When a silicon carbide single crystal is produced by using a sublimation-recrystallization method, the silicon carbide single crystal is grown by moving the region to be heated up to the sublimation temperature or higher at least once in the silicon carbide raw material. This heating method maintains the temperature of the crystal and the raw material at a suitable level and can effectively sublimate the raw material. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
