| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor light-emitting element with high light-emitting output which is formed by using a conductive substrate made from a metal and comprises a GaN layer. <P>SOLUTION: This compound semiconductor light-emitting element is constituted by laminating a conductive substrate/compound semiconductor functioning layer including GaN layer/electrode/adhesiveness improving layer/bonding layer, in this order, and the conductive substrate comprises a metal material which has such a coefficient of thermal expansion as a difference in coefficient of thermal expansion between the metal material and the GaN is 1.5×10<SP>-6</SP>/°C or below. The metal material comprises one or more kinds selected from the group consisting of W, Mo, Hf, La, Ta, Ir, Ru, Os and Nb as a main. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
