| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition which is suitable for a polishing liquid to be used for chemical mechanical polishing (CMP) in manufacturing a semiconductor device and has a rapid CMP speed and has little occurrence of dishing and can make possible the manufacture of LSIs, and to provide a polishing method using the same. <P>SOLUTION: The polishing composition contains polishing grains, each of which has a different hardness and elastic modulus in a central portion and in a surface portion. The polishing method uses this polishing composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
