发明名称 METHOD AND SYSTEM FOR FLUORINATED XENON ETCHING WITH IMPROVED EFFICIENCY
摘要 PROBLEM TO BE SOLVED: To provide a method and a system for fluorinated xenon etching with improved efficiency. SOLUTION: A device and a method useful for manufacturing a MEMS device are provided. One mode of the disclosed device provides a substrate which is exposed to a solid state etchant and provided with a material enabled to be etched. Here, the substrate and the solid state etchant are arranged in an etching chamber. In a plurality of embodiments, the solid state etchant is moved to a position near the substrate. In the other embodiments, a variable barrier exists between the substrate and the solid state etchant, to be opened. The solid state etchant generates a vapor phase etchant suitable for etching the material enabled to be etched. In a plurality of desirable embodiments, the solid state etchant is solid 2 fluorinated xenon. The device and the method are advantageously used in executing release etching in manufacturing of an optical modulator. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100795(A) 申请公布日期 2006.04.13
申请号 JP20050227383 申请日期 2005.08.05
申请人 IDC LLC 发明人 FLOYD PHILIP D;CUMMINGS WILLIAM J
分类号 H01L21/302;B81C99/00;G02B26/00 主分类号 H01L21/302
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