| 摘要 |
PROBLEM TO BE SOLVED: To expand gate width of a transistor formed in a semiconductor layer on an insulator without using an SOI substrate. SOLUTION: Selective epitaxial growth is performed to sequentially selectively form a comb-like first semiconductor layer 5 and second semiconductor layer 6 in an SOI forming region E1 on a semiconductor substrate 1, an oxidization-proofing film 8 is formed on the semiconductor substrate 1 to cover the second semiconductor layer 6, and an opening 9 is formed on the anti-oxidization film 8 so as to partially expose the terminal of the first semiconductor layer 5. An etching gas or etching liquid is in contact with the first semiconductor layer 5 via the opening 9 for de-etching the first semiconductor layer 5, a cavity 10 is formed between the semiconductor substrate 1 and the second semiconductor layer 6, and the semiconductor substrate 1 and the second semiconductor layer 6 are thermally oxidized to form an oxide film 11 in the cavity 10 between the semiconductor substrate 1 and the second semiconductor layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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