| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a drain diffusion layer with high positional accuracy without being influenced by the shape etc. of a field oxide film. SOLUTION: In the semiconductor device manufacturing method, a polysilicon film 9 and a silicon nitride film 10 are deposited on top face of an epitaxial layer 4. Then, the polysilicon film 9 and the silicon nitride film 10 are so patterned that they may be left over in a region where a LOCOS oxide film 14 is to be formed. Using a difference in level of the polysilicon film 9 and the silicon nitride film 10 as an alignment mark, a diffusion layer 11 is formed as a drain region. Thereafter, the LOCOS oxide film 14 is formed. By this manufacturing method, the diffusion layer 11 can be formed with high positional accuracy without being influenced by the shape of the LOCOS oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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