| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a gallium nitride crystal body and a method for producing a gallium nitride substrate by efficiently removing a nitride deposition formed on the side of a gallium nitride crystal body for producing a gallium nitride substrate and the side of a substrate. SOLUTION: In the method for producing the gallium nitride substrate from a gallium nitride crystal body 24 grown on a substrate 9 composed of a material different from gallium nitride by a vapor deposition process, a nitride deposition 26 is formed on the side of the gallium nitride crystal body 24 and the side of the substrate 9 by growth. The method includes: a stage where the nitride deposition 26 is removed by outer circumferential working; a stage where, after the outer circumferential working, the substrate 9 is removed by etching; and a stage where, after the etching, the residual nitride deposition 26e is removed. COPYRIGHT: (C)2006,JPO&NCIPI
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