发明名称 |
Multilayered structure film and method of making the same |
摘要 |
A first group of atoms is first deposited for forming a multilayered structure film. The atoms are subjected to heat treatment to form a first polycrystalline layer. A second group of atoms is deposited on the surface of the first polycrystalline layer so as to form a second polycrystalline layer having a thickness larger than the thickness of the first polycrystalline layer. A third group of atoms is deposited on the surface of the second polycrystalline layer so as to form a magnetic polycrystalline layer. The method enables a reliable prevention of migration of atoms in the first group during the deposition of the first group. This enables establishment of fine and uniform crystal grains in the first polycrystalline layer. Migration can still be suppressed during the deposition of the second group. Fine and uniform crystal grains can thus be established in the second polycrystalline layer.
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申请公布号 |
US2006078683(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050285254 |
申请日期 |
2005.11.22 |
申请人 |
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发明人 |
MUKAI RYOICHI |
分类号 |
G11B5/66;B05D1/36;B05D5/12;G11B5/64;G11B5/65;G11B5/73;G11B5/84;G11B5/851 |
主分类号 |
G11B5/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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