| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film useful as an insulating film of a low dielectric constant used for multi-layer wiring in a semiconductor integrated circuit device. <P>SOLUTION: A film is formed by chemical vapor deposition of a diamantane or adamantane compound having a particular substituent or a composition containing the compound. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
