| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device and its manufacturing method avoiding a deterioration in transistor characteristics in a memory cell transistor and the electric field concentration of a gate edge in the transistor for peripheral circuits. SOLUTION: At the bottom end part and the top end part of a floating gate 3, the bird's beak shape 5 of a thermal oxide film 4 is respectively formed. Moreover, the bird's beak shape 11 of the thermal oxide film 10 is formed at the bottom end part of a control gate. The dimension of the thermal oxide film 4 concerning a gate length direction is smaller than the dimension of the thermal oxide film 10 concerning the gate length direction. The bird's beak shape 5 is smaller than the bird's beak shape 11. Moreover, the bird's beak shape 5 is smaller than the bird's beak shape 38 (not illustrated) of the thermal oxide film 37 formed at the bottom end part of the gate electrode (polysilicon film 36) of the transistor for peripheral circuits. COPYRIGHT: (C)2006,JPO&NCIPI
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