| 摘要 |
PROBLEM TO BE SOLVED: To supply the process gas of a larger flow rate to a film deposition apparatus increasing the flow rate of the process gas by vaporizing a liquid material at high efficiency by a vaporizer. SOLUTION: A part of the liquid material is vaporized in a gas/liquid mixture 3, and gas/liquid mixed fluid is obtained including vaporization feed gas and the liquid material. The gas/liquid mixed fluid is further vaporized in the vaporizer 4 to obtain the vaporization feed gas, then the process gas and a mist included in the vaporization feed gas are separated. In a word, in the vaporizer 4, the gas/liquid mixed fluid is supplied in a diffused state to the inside of a heated vaporizer main body 41 from three vaporization nozzles 45, by which heat exchange is efficiently performed to secure a high vaporization rate. The process gas is vented to a film deposition processor 100 through a ventilation path which is bent in a gravity direction. As the mist falls by gravity at a bent portion, and is trapped at a trapping portion, the process gas and the mist are separated, by which the process gas of the larger flow rate is supplied to the film deposition processor 100. COPYRIGHT: (C)2006,JPO&NCIPI
|
