| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film semiconductor device which obtains a thin film transistor of amorphous-crystalline mixture, which has high carrier mobility in a channel constituted of an amorphous region and high activation efficiency of source-drain constituted of a crystallized region, in a low temperature process where a plastic substrate can be used. SOLUTION: The amorphous semiconductor thin film 5 is formed on a substrate 1, and a gate electrode 9 is pattern-formed on the semiconductor thin film 5 through a gate insulating film 7. Impurity is introduced to the semiconductor thin film 5 with the gate electrode 9 as a mask. The semiconductor thin film 5 is continuously irradiated with the laser beam Lh while an irradiation position is moved to the semiconductor thin film 5 at prescribed speed with the gate electrode 9 as the mask. The semiconductor thin film 5 is crystallized and excessive hydrogen is removed from an irradiation part of the laser beam Lh without expanding hydrogen gas in the semiconductor thin film 5. COPYRIGHT: (C)2006,JPO&NCIPI
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