| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor including a Schottky-S/D structure having small interface resistance Rc. SOLUTION: The MOS transistor having a first-conductivity-type channel comprises a first-conductivity-type semiconductor region 1 containing first and second channel regions CH; a gate insulating film 2 provided on the first and second channel regions CH; a gate electrode 3 provided on the gate insulating film 2; and mutually separated first and second source/drain regions 4 that are provided, so that the first and second channel regions CH are held and are subjected to Schottky junction with the first-conductivity-type semiconductor region 1. COPYRIGHT: (C)2006,JPO&NCIPI
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