| 摘要 |
PROBLEM TO BE SOLVED: To provide a drive circuit which prevents generation of a through current in a push-pull output portion of a CMOS output portion or the like, even if a supply voltage VDD supplied from a low-voltage supply is dropped lower than a recommended operating supply voltage. SOLUTION: The drive circuit is provided with a level shift portion 13 which has a P-type MOS transistor 2 for a source to be connected to a high-voltage supply, for a drain to be connected to an IN 4 and for a gate to be connected to an IN 5, a P-type MOS transistor 3 for the source to be connected to the high voltage supply, for the drain to be connected to the IN 5 and for the gate to be connected to the IN 4, an N-type MOS transistor 5 for the source to be grounded, for the drain to be connected to the IN 4 and for the gate to receive a low-voltage signal, and an N-type transistor 6 for the source to be grounded and for the drain to be connected to the IN 5 and a CMOS output portion 14 which has a P-type MOS transistor 1 and an N-type MOS transistor 4. The drive current of the P-type MOS transistor 2 is larger than the drive current of the N-type MOS transistor 5. COPYRIGHT: (C)2006,JPO&NCIPI
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