发明名称 |
Trench cut light emitting diodes and methods of fabricating same |
摘要 |
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
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申请公布号 |
US2006079082(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050273008 |
申请日期 |
2005.11.14 |
申请人 |
CREE, INC. |
发明人 |
BRUHNS MICHAEL T.;WILLIAMS BRAD;LAHAYE JEFF;ANDREWS PETER |
分类号 |
H01L21/4763;H01L33/00;H01L33/20 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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