发明名称 |
Chemical mechanical polishing process for manufacturing semiconductor devices |
摘要 |
A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.
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申请公布号 |
US2006079154(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20040964145 |
申请日期 |
2004.10.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIOU WEN-CHIH;CHEN YING-HO;YU CHEN-HUA |
分类号 |
B24B7/30;B24B1/00 |
主分类号 |
B24B7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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