THIN FILM SEMICONDUCTOR DEVICE, PHOTOELECTRIC DEVICE, ELECTRONIC INSTRUMENT, METHOD OF MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE AND THIN FILM ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To raise voltage withstand property and reduce off leakage current, in a thin film semiconductor device such as TFT (Thin Film Transistor) or the like, for example.

SOLUTION: A semiconductor film comprises a channel region and a source region as well as a drain region, into both of which impurity is doped and which are provided with an island-type plane pattern, and a gate electrode arranged so as to be opposed to the channel region through a gate insulating film. The concentration of the impurity in a first part neighbored to at least the channel region among the peripheral regions of the island-type plane patterns in respective source region and drain region is lower compared with a central region excluding a second part, excluding the peripheral region and neighbored to the channel region along the channel region.

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