| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor with a deformable gate that can more precisely detect the gate's behavior. SOLUTION: The MOS transistor with a deformable gate formed on a semiconductor substrate includes a source and a drain that are separated by a channel area extending in a first direction from the source to the drain and then in a second direction perpendicular to the first direction, and a beam of an electrically conductive gate provided at least at an upper part of the channel area extending in the second direction between bearing points formed on substrates on both sides of the channel area, wherein the surface of the channel area is depressed, and when the beam has a largest warp against the channel area, the surface of the channel area has the same shape as the gate's beam. COPYRIGHT: (C)2006,JPO&NCIPI
|
