| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer which improves a process yield and uniformizes an active layer thickness within a field. SOLUTION: An element board of 150 mm in diameter and a supporting board are prepared respectively so that wet oxidation is carried out to an element board so as to form an oxide film of 1μm thickness. The surface side to be polished of the element board wherein the oxide film is formed, and the polished surface of a supporting board, are superposed and contacted closely. Heat treatment is performed to the closely contacted joined substrates under high temperature of 1,000°C so as to reinforce the junction force of the superposed surfaces. Then, it is made to reduce to 125 mm in diameter. After removing the oxide film formed by carrying out fluoric acid processing at the time of heat treatment, grinding and primary polish are made for the surface. After generating perimeter sagging in the periphery of the range (region) of 2 mm from the end face (outermost periphery) of the joined substrates, once again, it is made to reduce to 100 mm in diameter by chamfering work. Finally, secondary polish and finishing polish are made so as to produce the SOI wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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