发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves a driving force at a conduction time. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming a predetermined groove 15 to one principal surface side of a semiconductor substrate having a substrate 1 and a drain region 2; forming an embedding region 11 in contact with at least the side wall of the groove 15 so that this groove 15 is protruded; forming a hetero semiconductor layer 30 so that the semiconductor substrate and the embedding region 11 are attached; and forming the hetero semiconductor region 3 by patterning the hetero semiconductor layer 30. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100357(A) 申请公布日期 2006.04.13
申请号 JP20040281639 申请日期 2004.09.28
申请人 NISSAN MOTOR CO LTD 发明人 HAYASHI TETSUYA;HOSHI MASAKATSU;SHIMOIDA YOSHIO;TANAKA HIDEAKI
分类号 H01L29/78;H01L21/336;H01L29/12 主分类号 H01L29/78
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