发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves a driving force at a conduction time. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming a predetermined groove 15 to one principal surface side of a semiconductor substrate having a substrate 1 and a drain region 2; forming an embedding region 11 in contact with at least the side wall of the groove 15 so that this groove 15 is protruded; forming a hetero semiconductor layer 30 so that the semiconductor substrate and the embedding region 11 are attached; and forming the hetero semiconductor region 3 by patterning the hetero semiconductor layer 30. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006100357(A) |
申请公布日期 |
2006.04.13 |
申请号 |
JP20040281639 |
申请日期 |
2004.09.28 |
申请人 |
NISSAN MOTOR CO LTD |
发明人 |
HAYASHI TETSUYA;HOSHI MASAKATSU;SHIMOIDA YOSHIO;TANAKA HIDEAKI |
分类号 |
H01L29/78;H01L21/336;H01L29/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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