METHOD FOR FORMING DIELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To enable the miniaturization of a device employing a ferroelectric thin film or a high dielectric thin film by reducing a variation in characteristics of the ferroelectric thin film or the high dielectric thin film existing in each individual region for forming the device. SOLUTION: The process for forming a dielectric thin film comprises a step for arranging crystal particles 13 formed of ferroelectrics or dielectrics on a substrate 11, and a step for forming a ferroelectric thin film or a high dielectric thin film 15 to cover the crystal particles 13 thus arranged. COPYRIGHT: (C)2006,JPO&NCIPI