发明名称 |
High mobility plane CMOS SOI |
摘要 |
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-type transistors (e.g., PFETs) are formed on second portions of the substrate having a second type of crystalline orientation. Some of the first portions of the substrate comprise non-floating substrate portions, and the remaining ones of the first portions and all of the second portions of the substrate comprise floating substrate portions.
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申请公布号 |
US2006076623(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050270708 |
申请日期 |
2005.11.09 |
申请人 |
ANDERSON BRENT A;LEONG MEIKEI;NOWAK EDWARD J |
发明人 |
ANDERSON BRENT A.;LEONG MEIKEI;NOWAK EDWARD J. |
分类号 |
H01L27/08;H01L27/12;H01L21/336;H01L21/762;H01L21/82;H01L21/8238;H01L21/84;H01L27/02;H01L27/092;H01L27/10;H01L29/786;H01L29/788 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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