| 发明名称 |
Gate structures with silicide sidewall barriers and methods of manufacturing the same |
| 摘要 |
A gate structure includes a gate insulation layer on a substrate, a polysilicon layer pattern on the gate insulation layer, a composite metal layer pattern on the polysilicon layer pattern, and a metal silicide layer pattern on a sidewall of the composite metal layer pattern.
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| 申请公布号 |
US2006079075(A1) |
申请公布日期 |
2006.04.13 |
| 申请号 |
US20050201736 |
申请日期 |
2005.08.11 |
| 申请人 |
LEE CHANG-WON;YOUN SUN-PIL;CHOI GIL-HEYUN;LEE BYUNG-HAK;PARK HEE-SOOK;LIM DONG-CHAN;YOO JONG-RYEOL;SOHN WOONG-HEE |
发明人 |
LEE CHANG-WON;YOUN SUN-PIL;CHOI GIL-HEYUN;LEE BYUNG-HAK;PARK HEE-SOOK;LIM DONG-CHAN;YOO JONG-RYEOL;SOHN WOONG-HEE |
| 分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
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