| 摘要 |
A row decoder circuit of a NAND flash memory and method of supplying an operating voltage using the same. To prevent an operating voltage (e.g., a program voltage, a pass voltage, or a read voltage) from being abnormally transferred to a gate of a memory cell because a pumping voltage is applied to a gate of a high-voltage pass transistor of the row decoder circuit in a level lower than a target voltage, the pumping voltage is first applied to the gate of the high-voltage pass transistor (i.e., precharging the gate of the high-voltage pass transistor) and next the operating voltage is applied to a drain of the high voltage pass transistor. Thus, the pumping voltage becomes higher than the target voltage due to a self-boosting effect through the structure of transistor, enabling the operating voltage to be normally transferred to the gate of the memory cell.
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