发明名称 Non-planar sputter targets having crystallographic orientations promoting uniform deposition
摘要 A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface ( 25 ) that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome ( 22 ) end of the sputter target ( 20 ) is comprised of a first crystallographic orientation and sidewalls ( 24 ) of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (alpha, beta1, beta2) in the target.
申请公布号 US2006076234(A1) 申请公布日期 2006.04.13
申请号 US20050526702 申请日期 2005.09.14
申请人 TOSOH SMD, INC. 发明人 BAILEY ROBERT S.;HOLCOMB MELVIN K.;SMATHERS DAVID B.;WIEMELS TIMOTHY
分类号 C23C14/00;C23C14/34 主分类号 C23C14/00
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