发明名称 A MASK AND A METHOD FOR TREATING A SUBSTRATE WITH A MATERIAL FLUX TO DEPOSIT OR REMOVE A LAYER HAVING A PREDETERMINED THICKNESS PROFILE
摘要 A mask is providing for treating a substrate with a material flux to deposit or remove a layer having a predetermined thickness profile. The mask comprises a plurality of apertures (45) for interfering upon oscillatory movement with the first beam of flux material in a manner such that a plurality of secondary beams of the material flux are generated which are directed to the surface of the substrate. The apertures (45) are arranged in a plurality of rows and positioned so that portions of apertures of one row are interspaced with portions of apertures of an adjacent row. The interspaced aperture portions have an average width that is smaller than an average width of aperture portions that are not interspaced.
申请公布号 WO2006037153(A1) 申请公布日期 2006.04.13
申请号 WO2005AU01503 申请日期 2005.09.29
申请人 COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION;ARKWRIGHT, JOHN 发明人 ARKWRIGHT, JOHN
分类号 (IPC1-7):H01L21/467;C23C16/52;C23C16/04;C23C14/54;C23C14/04 主分类号 (IPC1-7):H01L21/467
代理机构 代理人
主权项
地址