发明名称 Porous low dielectric constant compositions and methods for making and using same
摘要 A porous organosilicate glass (OSG) film: Si<SUB>v</SUB>O<SUB>w</SUB>C<SUB>x</SUB>H<SUB>y</SUB>F<SUB>z</SUB>, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si-CH<SUB>3</SUB>) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si-H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.
申请公布号 US2006078676(A1) 申请公布日期 2006.04.13
申请号 US20050228223 申请日期 2005.09.19
申请人 LUKAS AARON S;O'NEILL MARK L;KARWACKI EUGENE J JR;VRTIS RAYMOND N;VINCENT JEAN L 发明人 LUKAS AARON S.;O'NEILL MARK L.;KARWACKI EUGENE J.JR.;VRTIS RAYMOND N.;VINCENT JEAN L.
分类号 C23C16/00;B32B9/00;B32B13/04;B32B17/06;B32B19/00 主分类号 C23C16/00
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