| 摘要 |
A bond type diode which is composed of gallium arsenide doped with tin within the range of 1 x 1016 to 5 x 1017 atoms/cm3, preferably about 3 x 1017 atoms/cm3, of a gold wire containing zinc welded onto a portion of a surface of the tin-doped gallium arsenide, and of an electrode in ohmic contact with the tin-doped gallium arsenide at a portion different from the welded portion.
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