<p>An etch stop (203) layer located over a plasma enhanced nitride (PEN) layer (132). Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN layer may include transistors with improved drive current at a given leakage current. Also, integrated circuits with the PEN layer may exhibit reduced parasitic capacitance.</p>
申请公布号
WO2006039028(A1)
申请公布日期
2006.04.13
申请号
WO2005US30771
申请日期
2005.08.30
申请人
FREESCALE SEMICONDUCTOR, INC.;CHEN, JIAN;FILIPIAK, STANLEY, M.;JEON, YONGJOO;STEPHENS, TAB, A.
发明人
CHEN, JIAN;FILIPIAK, STANLEY, M.;JEON, YONGJOO;STEPHENS, TAB, A.