| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which enables the easy and sure growth of CNT (Carbon Nano Tube) in a predetermined area with an arbitrary form and size on the substrate without patterning catalyst materials, namely without damaging other parts on the substrate and polluting the corresponding catalyst materials. SOLUTION: This method patternizes a Ti film 2 in a desired area on a silicon substrate 1 and forms a Co film 3 on the substrate 1, covering the Ti film 2. Then, it employs the thermal CVD method to form CNT4 at about 600°C only at the portion with the Ti film 2 formed at the bottom on the surface of the Co film 3. The length of CNT4 can be controlled by adjusting the thickness of the Ti film 2. COPYRIGHT: (C)2006,JPO&NCIPI |
