| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor devices whereby there is so improved the adhesiveness of the interface between a silicon nitride film of a passivation film formed by a plasma CVD method, and a foundational insulating film of a silicon oxide film formed by a plasma CVD method using especially a TEOS gas as its raw material as to be able to prevent the interface from peeling in post-processes. SOLUTION: The manufacturing method for semiconductor devices has a process for depositing by a CVD method a foundational insulating film on the whole of the surface of a semiconductor substrate having thereon a formed wiring, a process for irradiating the plasma of a nitrogen gas or an ammonia gas on the surface of the foundational insulating film when depositing by a plasma CVD method a silicon nitride film on the foundational insulating film, and a process for depositing thereafter by the plasma CVD method the silicon nitride film. COPYRIGHT: (C)2006,JPO&NCIPI
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