| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device and a semiconductor device capable of avoiding the problem of a processing process, such as failure by a resist pattern. SOLUTION: The manufacturing method of a semiconductor device is provided on a semiconductor substrate with a process for forming a first member to be patterned; a process for forming a connection section which connects the two or more patterns in a line shape, in at least one end side of the patterns in a line shape and two or more line parallel patterns in a line shape by patterning the first member to be patterned; and a process for separating the pattern in a line shape from the connection sections, by etching the section between the pattern in a line shape and the connection sections. COPYRIGHT: (C)2006,JPO&NCIPI
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