| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride self-supporting substrate by efficiently removing a nitride deposit formed on the outer periphery of a GaN crystal and a GaAs substrate. SOLUTION: The method for manufacturing a gallium nitride self-supporting substrate comprises manufacturing the substrate from a gallium nitride crystal 24 grown by chemical vapor deposition on a substrate 9 composed of a material different from gallium nitride. As the crystal grows, a nitride deposit 26 is formed on a side face of the gallium nitride crystal 24 and the substrate 9. This method comprises the steps of removing the nitride deposit 26 by peripheral processing and, after the peripheral processing, separating the substrate 9 from the gallium nitride crystal 24 to make the substrate 9 and the gallium nitride crystal 24 independent to each other. COPYRIGHT: (C)2006,JPO&NCIPI
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