Field effect transistors having a strained silicon channel and methods of fabricating same

摘要

Field effect transistors (FETs) and methods of fabricating FETs that include a channel layer on sidewalls of a structure on a semiconductor substrate and having at least a portion of the channel layer strained in a direction that the sidewalls of the structure extend from the semiconductor substrate are provided. The transistor may be a FinFET, the structure on the semiconductor substrate that includes a fin structure and the sidewalls may be sidewalls of the fin structure. The channel layer may be a Si epitaxial layer and may be on an inner fin structure that includes alternating layers of SiGe and Si. The channel layer may include strained and unstrained portions. The strained and unstrained portions may be sidewalls of the channel layer.