发明名称 |
Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom |
摘要 |
A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
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申请公布号 |
US2006076578(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050285008 |
申请日期 |
2005.11.23 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;OSTERNAUD BENEDITE;LE VAILLANT YVES-MATHIEU;AKATSU TAKESHI |
分类号 |
H01L31/109;H01L21/46 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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