发明名称 |
GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE |
摘要 |
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. |
申请公布号 |
WO2006023060(A3) |
申请公布日期 |
2006.04.13 |
申请号 |
WO2005US22597 |
申请日期 |
2005.06.24 |
申请人 |
CREE, INC.;BERGMANN, MICHAEL JOHN;EMERSON, DAVID TODD |
发明人 |
BERGMANN, MICHAEL JOHN;EMERSON, DAVID TODD |
分类号 |
H01L33/06;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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