| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a fine pattern can be formed without using a resist pattern formed by a complicated process. <P>SOLUTION: The pattern forming method includes: a step of selectively forming an under active layer containing a polymerization initiator on a surface of a layer to be etched on a substrate; a step of forming a polymer layer on the under active layer by living radical polymerization of an organic monomer; and a step of selectively etching the layer to be etched through the polymer layer as a mask. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
