| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for reducing a void in wiring in a recess, and for securing the reliability of wiring. SOLUTION: A compression stress force application film 5 constituted of substances having the coefficients of thermal expansion which are 60% or less to the coefficients of thermal expansion of metal configuring a plating film 4 is formed on the plating film 4, and heat treatment is carried out while a compression stress is applied to the plating film 4 by a compression stress applying film 5. COPYRIGHT: (C)2006,JPO&NCIPI
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